Infineon IGB50N65S5ATMA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO263
- RS庫存編號:
- 226-6063
- 製造零件編號:
- IGB50N65S5ATMA1
- 製造商:
- Infineon
小計(1 包,共 5 件)*
TWD510.00
(不含稅)
TWD535.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,000 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 + | TWD102.00 | TWD510.00 |
* 參考價格
- RS庫存編號:
- 226-6063
- 製造零件編號:
- IGB50N65S5ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | 30V | |
| Maximum Power Dissipation | 270 W | |
| Number of Transistors | 1 | |
| Configuration | Single | |
| Package Type | PG-TO263 | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage 30V | ||
Maximum Power Dissipation 270 W | ||
Number of Transistors 1 | ||
Configuration Single | ||
Package Type PG-TO263 | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
The Infineon IGB50N65S is 50 A IGBT with anti-parallel diode with no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.
Very low VCEsat of 1.35 V at 25°C
Maximum junction temperature Tvj 175°C
four times nominal current
Maximum junction temperature Tvj 175°C
four times nominal current
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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