Infineon IKWH75N65EH7XKSA1, Type N-Channel IGBT, 80 A 650 V, 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole

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RS庫存編號:
285-014
製造零件編號:
IKWH75N65EH7XKSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

341W

Package Type

PG-TO-247-3-STD-NN4.8

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

40°C

Maximum Operating Temperature

175°C

Length

20.1mm

Width

15.9 mm

Height

5.1mm

Standards/Approvals

No

Automotive Standard

No

The Infineon IGBT represents a ground breaking advancement in power electronics, leveraging the superior performance of 650 V TRENCHSTOP IGBT7 technology. Designed for high speed applications, this IGBT is engineered to deliver low saturation voltage and minimal switching losses, making it an Ideal choice for a variety of demanding applications, including industrial UPS, EV charging, and string inverters. Its robust construction ensures humidity resilience and optimised switching behaviour, positioning it as a reliable solution for both two and three level topologies. With its comprehensive product spectrum complemented by PSpice models, users can effectively integrate this IGBT into their systems, fully utilising its Advanced capabilities.

Delivers low collector emitter saturation voltage

Exhibits low switching losses for enhanced efficiency

Optimized for dynamic hard switching applications

Humidity robustness ensures operational reliability

Accommodates various power applications seamlessly

Qualified for industrial use under JEDEC standards

Supports robust power conversion solutions

Integrated with PSpice models for design flexibility

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