Name: Infineon IKWH100N65EH7XKSA1, Type N-Channel IGBT 650 V, 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole
Brand: Infineon
SKU: 285-007
Price: 299.25 TWD
Availability: OutOfStock

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選取全部	屬性	值
	品牌	Infineon
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	427W
	Package Type	PG-TO-247-3-STD-NN4.8
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	±20 V
	Maximum Operating Temperature	175°C
	Height	5.1mm
	Length	20.1mm
	Width	15.9 mm
	Standards/Approvals	IEC 60749, IEC 60747, IEC 60068
	Series	IGBT7
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 427W
	Package Type PG-TO-247-3-STD-NN4.8
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO ±20 V
	Maximum Operating Temperature 175°C
	Height 5.1mm
	Length 20.1mm
	Width 15.9 mm
	Standards/Approvals IEC 60749, IEC 60747, IEC 60068
	Series IGBT7
	Automotive Standard No

Datasheet - IKWH100N65EH7XKSA1

The Infineon IGBT is a state of the ART power module that leverages cutting edge TRENCHSTOP IGBT7 technology. Designed for high efficiency, it delivers a low saturation voltage with swift switching capabilities, making it Ideal for demanding industrial applications. This module supports a collector emitter voltage rating of 650 V and is engineered for robust performance under various conditions. With its integrated Emitter Controlled diode, it ensures smooth operation whilst maintaining user safety with impressive humidity robustness. Suitable for applications such as industrial UPS systems, EV charging, and string inverters, this product exemplifies reliability and Advanced engineering in the world of power electronics. Its comprehensive thermal management and product validation according to JEDEC standards position it as a trusted choice among engineers seeking high performance solutions.

Offers low switching losses for performance

Designed for superior collector emitter saturation voltage

Includes fast recovery diode for optimal response

Ensures humidity robustness for reliable operation

Optimized for various high power applications

Comprehensive thermal management for efficient heat dissipation

Qualified for industrial applications for reliability

Delivers smooth switching to reduce electrical noise

Supports a wide range of voltages for adaptability

Infineon IKWH100N65EH7XKSA1, Type N-Channel IGBT 650 V, 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole

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