Infineon IKWH100N65EH7XKSA1, Type N-Channel IGBT 650 V, 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole

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TWD299.25

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  • 2026年8月17日 發貨
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包裝方式:
RS庫存編號:
285-007
製造零件編號:
IKWH100N65EH7XKSA1
製造商:
Infineon
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品牌

Infineon

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

427W

Package Type

PG-TO-247-3-STD-NN4.8

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Series

IGBT7

Height

5.1mm

Length

20.1mm

Standards/Approvals

IEC 60749, IEC 60747, IEC 60068

Automotive Standard

No

The Infineon IGBT is a state of the ART power module that leverages cutting edge TRENCHSTOP IGBT7 technology. Designed for high efficiency, it delivers a low saturation voltage with swift switching capabilities, making it Ideal for demanding industrial applications. This module supports a collector emitter voltage rating of 650 V and is engineered for robust performance under various conditions. With its integrated Emitter Controlled diode, it ensures smooth operation whilst maintaining user safety with impressive humidity robustness. Suitable for applications such as industrial UPS systems, EV charging, and string inverters, this product exemplifies reliability and Advanced engineering in the world of power electronics. Its comprehensive thermal management and product validation according to JEDEC standards position it as a trusted choice among engineers seeking high performance solutions.

Offers low switching losses for performance

Designed for superior collector emitter saturation voltage

Includes fast recovery diode for optimal response

Ensures humidity robustness for reliable operation

Optimized for various high power applications

Comprehensive thermal management for efficient heat dissipation

Qualified for industrial applications for reliability

Delivers smooth switching to reduce electrical noise

Supports a wide range of voltages for adaptability

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