Infineon CoolSiC Type N-Channel MOSFET, 10 A, 1700 V Enhancement, 3-Pin PG-TO-247-3-STD-NN4.8 IMWH170R450M1XKSA1
- RS庫存編號:
- 349-109
- 製造零件編號:
- IMWH170R450M1XKSA1
- 製造商:
- Infineon
可享批量折扣
查看批量定價選項小計（1 件）*
TWD336.00
(不含稅)
TWD352.80
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年3月15日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD336.00 |
| 10 - 99 | TWD302.00 |
| 100 - 499 | TWD279.00 |
| 500 - 999 | TWD257.00 |
| 1000 + | TWD232.00 |
* 參考價格
- RS庫存編號:
- 349-109
- 製造零件編號:
- IMWH170R450M1XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Package Type | PG-TO-247-3-STD-NN4.8 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 390mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11.7nC | |
| Maximum Power Dissipation Pd | 111W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Package Type PG-TO-247-3-STD-NN4.8 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 390mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11.7nC | ||
Maximum Power Dissipation Pd 111W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon CoolSiC Series MOSFET, 1700V Drain Source Voltage, 10A Continuous Drain Current - IMWH170R450M1XKSA1
This MOSFET is a silicon‑carbide power transistor designed for high‑voltage switching in demanding electronic systems. It operates as an N‑channel enhancement device in a through‑hole PG‑TO‑247 3‑pin package, enabling straightforward mounting and thermal management for power stages. The device suits environments requiring wide temperature tolerance and RoHS‑compliant construction.
Features and Benefits:
• 1700V drain‑source rating enables high‑voltage switching capability
• 10A continuous drain current supports sustained power flow
• 111W maximum power dissipation improves heat handling in applications
• 390 mΩ Rds(on) reduces conduction losses under load
• 11.7 nC typical gate charge enables predictable switching energy
• ±15V gate‑source withstand simplifies drive voltage design
• 10A continuous drain current supports sustained power flow
• 111W maximum power dissipation improves heat handling in applications
• 390 mΩ Rds(on) reduces conduction losses under load
• 11.7 nC typical gate charge enables predictable switching energy
• ±15V gate‑source withstand simplifies drive voltage design
Applications
• Suitable for high‑voltage converter topologies in power supplies
• Ideal for switch‑mode power systems in industrial equipment
• Used with power inverters requiring high breakdown voltage
• Can be used for hard‑switching stages in motor drive electronics
• Useful for lab prototyping where through‑hole mounting is preferred
• Ideal for switch‑mode power systems in industrial equipment
• Used with power inverters requiring high breakdown voltage
• Can be used for hard‑switching stages in motor drive electronics
• Useful for lab prototyping where through‑hole mounting is preferred
What temperature range can it tolerate in operation?
It operates across a wide span from -55 °C up to 175 °C, accommodating harsh thermal conditions.
How many pins and what mounting style does it use?
The component has three pins and a through‑hole mount in a PG‑TO‑247 3‑pin package for PCB fastening.
What compliance or approvals apply to this device?
It conforms to RoHS requirements for restricted substances.
What gate voltage limits should be observed during design?
The gate‑to‑source voltage must not exceed ±15V (15V in magnitude) to avoid device stress.
相關連結
- Infineon CoolSiC Type N-Channel MOSFET 1700 V Enhancement, 3-Pin PG-TO-247-3-STD-NN4.8 IMWH170R650M1XKSA1
- Infineon CoolSiC Type N-Channel MOSFET 1700 V Enhancement, 3-Pin PG-TO-247-3-STD-NN4.8 IMWH170R1K0M1XKSA1
- Infineon IKWH50N65EH7XKSA1 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole
- Infineon IKWH40N65EH7XKSA1 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole
- Infineon IKWH100N65EH7XKSA1 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole
- Infineon IKWH75N65EH7XKSA1 80 A 650 V Through Hole
- Infineon CoolSiC Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R080M1TXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R120M1TXKSA1