Infineon CoolSiC Type N-Channel MOSFET, 69 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R030M1TXKSA1

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  • 2026年10月26日 發貨
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RS庫存編號:
349-375
製造零件編號:
AIMZH120R030M1TXKSA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

69A

Maximum Drain Source Voltage Vds

1200V

Package Type

PG-TO-247-4-STD-NT6.7

Series

CoolSiC

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

38mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

326W

Maximum Gate Source Voltage Vgs

23 V

Typical Gate Charge Qg @ Vgs

57nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101, AEC-Q100

COO (Country of Origin):
CN
The Infineon SiC MOSFET features best in class switching performance, robustness against parasitic turn ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on board charger and DC to DC applications.

Very low switching losses

Best in class switching energy

Lowest device capacitances

Sense pin for optimized switching performance

Suitable for HV creepage requirements

Thinner leads for reduced risk of solder bridges

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