Infineon CoolSiC Type N-Channel MOSFET, 7.5 A, 1700 V Enhancement, 3-Pin PG-TO-247-3-STD-NN4.8 IMWH170R650M1XKSA1
- RS庫存編號:
- 349-110
- 製造零件編號:
- IMWH170R650M1XKSA1
- 製造商:
- Infineon
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小計（1 包，共 2 件）*
TWD499.00
(不含稅)
TWD523.96
(含稅)
訂單超過 $1,300.00 免費送貨
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- 加上 230 件從 2026年1月19日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 18 | TWD249.50 | TWD499.00 |
| 20 - 198 | TWD224.50 | TWD449.00 |
| 200 + | TWD207.00 | TWD414.00 |
* 參考價格
- RS庫存編號:
- 349-110
- 製造零件編號:
- IMWH170R650M1XKSA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.5A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Series | CoolSiC | |
| Package Type | PG-TO-247-3-STD-NN4.8 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 580mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Maximum Power Dissipation Pd | 88W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.5A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Series CoolSiC | ||
Package Type PG-TO-247-3-STD-NN4.8 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 580mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Maximum Power Dissipation Pd 88W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon CoolSiC 1700 V SiC Trench MOSFET is a high performance silicon carbide MOSFET designed for efficient power switching. It is 12 V / 0 V gate-source voltage compatible, making it suitable for use with most flyback controllers. Featuring a benchmark gate threshold voltage (VGS(th)) of 4.5 V, it ensures reliable and efficient switching performance in a wide range of power applications. This MOSFET is an excellent choice for systems requiring high voltage operation and enhanced energy efficiency.
Very low switching losses
Fully controllable dv/dt for EMI optimization
The .XT interconnection technology for best in class thermal performance
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