Infineon IKWH40N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 80 A 650 V, 3-Pin PG-TO247-3-STD-NN4.8,

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RS庫存編號:
285-008
製造零件編號:
IKWH40N65EH7XKSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

208 W

Package Type

PG-TO247-3-STD-NN4.8

Configuration

Single Collector, Single Emitter, Single Gate

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

The Infineon IGBT is a cutting edge IGBT module, utilising TRENCHSTOP IGBT7 technology for exceptional performance in high speed applications with low saturation voltage. Designed with a collector emitter voltage rating of 650 V, this module ensures enhanced efficiency and minimal energy loss, making it ideal for demanding industrial environments. With its robust package and optimised thermal properties, this module offers outstanding robustness against humidity, ensuring consistent operation across various conditions.

High speed operation for efficient energy management
Low collector emitter saturation voltage boosts performance
Soft recovery diode ensures gentle switching
Humidity resistant design for reliability in diverse conditions
Optimized for two and three level topologies
Comprehensive product spectrum for tailored solutions
Qualified for industrial applications per rigorous JEDEC standards

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