Infineon IKWH75N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 75 A 650 V, 3-Pin PG-TO247-3-STD-NN4.8,

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包裝方式：
RS庫存編號:
285-016
製造零件編號:
IKWH75N65EH7XKSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

341 W

Package Type

PG-TO247-3-STD-NN4.8

Configuration

Single Collector, Single Emitter, Single Gate

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

The Infineon IGBT represents a ground breaking advancement in power electronics, leveraging the superior performance of 650 V TRENCHSTOP IGBT7 technology. Designed for high speed applications, this IGBT is engineered to deliver low saturation voltage and minimal switching losses, making it an ideal choice for a variety of demanding applications, including industrial UPS, EV charging, and string inverters. Its robust construction ensures humidity resilience and optimised switching behaviour, positioning it as a reliable solution for both two and three level topologies. With its comprehensive product spectrum complemented by PSpice models, users can effectively integrate this IGBT into their systems, fully utilising its advanced capabilities.

Delivers low collector emitter saturation voltage
Exhibits low switching losses for enhanced efficiency
Optimized for dynamic hard switching applications
Humidity robustness ensures operational reliability
Accommodates various power applications seamlessly
Qualified for industrial use under JEDEC standards
Supports robust power conversion solutions
Integrated with PSpice models for design flexibility

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