Infineon IGB50N65S5ATMA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO263

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小計(1 卷,共 1000 件)*

TWD44,800.00

(不含稅)

TWD47,040.00

(含稅)

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RS庫存編號:
226-6062
製造零件編號:
IGB50N65S5ATMA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Number of Transistors

1

Maximum Power Dissipation

270 W

Package Type

PG-TO263

Configuration

Single

Channel Type

N

Pin Count

3

Transistor Configuration

Single

The Infineon IGB50N65S is 50 A IGBT with anti-parallel diode with no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.

Very low VCEsat of 1.35 V at 25°C
Maximum junction temperature Tvj 175°C
four times nominal current

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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