製造零件編號

Infineon IKW50N65H5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3

RS庫存編號:: 259-1535
製造零件編號:: IKW50N65H5FKSA1
製造商:: Infineon

Infineon IKW50N65H5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3

可享批量折扣

小計（1 包，共 2 件）*

TWD279.00

(不含稅)

TWD292.96

訂單超過 $1,300.00 免費送貨

有庫存

238 件準備從其他地點送貨

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單位	每單位	每包*
2 - 8	TWD139.50	TWD279.00
10 - 24	TWD125.00	TWD250.00
26 - 98	TWD118.00	TWD236.00
100 - 238	TWD103.00	TWD206.00
240 +	TWD97.50	TWD195.00

* 參考價格

RS庫存編號:: 259-1535
製造零件編號:: IKW50N65H5FKSA1
製造商:: Infineon

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選取全部	屬性	值
	品牌	Infineon
	Maximum Continuous Collector Current	80 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	305 W
	Package Type	PG-TO247-3

	選取全部
	品牌 Infineon
	Maximum Continuous Collector Current 80 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 305 W
	Package Type PG-TO247-3

Datasheet - IKW50N65H5FKSA1

The Infineon high speed IGBT5 is co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. It has Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability. 50 V increase in the bus voltage possible without compromising reliability.

650 V breakthrough voltage
Compared to best-in-class HighSpeed 3 family
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
Co-packed with Rapid Si-diode technology
Low COES/EOSS
Mild positive temperature coefficient VCEsa

Infineon IKW50N65H5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3

訂單超過 $1,300.00 免費送貨

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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