Infineon IGW50N65F5FKSA1 IGBT Module, 50 A 650 V, 3-Pin PG-TO-247
- RS庫存編號:
- 259-1527
- 製造零件編號:
- IGW50N65F5FKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD268.00
(不含稅)
TWD281.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 182 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD134.00 | TWD268.00 |
| 10 - 24 | TWD120.50 | TWD241.00 |
| 26 - 98 | TWD117.00 | TWD234.00 |
| 100 - 198 | TWD98.50 | TWD197.00 |
| 200 + | TWD96.00 | TWD192.00 |
* 參考價格
- RS庫存編號:
- 259-1527
- 製造零件編號:
- IGW50N65F5FKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 305W | |
| Package Type | PG-TO-247 | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, JEDEC | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 305W | ||
Package Type PG-TO-247 | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, JEDEC | ||
Automotive Standard No | ||
The Infineon new TRENCHSTOPIGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow. It has best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability. 50V increase in the bus voltage possible without compromising reliability.
650V breakthrough voltage
Compared to Infineon’s Best-in-class HighSpeed 3 family
Factor 2.5 lower Q g
Factor 2 reduction in switching losses
200mV reduction in V CE(sat)
Low C OES/E OSS
Mild positive temperature coefficient V CE(sat)
Temperature stabilit
相關連結
- Infineon IGBT Module 3-Pin PG-TO-247
- Infineon IKW50N65F5FKSA1 IGBT Module 3-Pin PG-TO-247
- Infineon IKW50N65H5FKSA1 IGBT Module 3-Pin PG-TO-247
- Infineon IKW50N65RH5XKSA1 IGBT Module 3-Pin PG-TO-247
- Infineon IGBT Module, 75 A 650 V PG-TO-247
- Infineon IKW75N65SS5XKSA1 IGBT Module, 75 A 650 V PG-TO-247
- Infineon IGBT Module 3-Pin PG-TO-247
- Infineon IGBT Module 3-Pin PG-TO-247