Infineon IGW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3

RS庫存編號:: 259-1526
製造零件編號:: IGW50N65F5FKSA1
製造商:: Infineon

Infineon IGW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3

小計（1 管，共 30 件）*

TWD2,316.00

(不含稅)

TWD2,431.80

訂單超過 $1,300.00 免費送貨

有庫存

180 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
30 +	TWD77.20	TWD2,316.00

* 參考價格

RS庫存編號:: 259-1526
製造零件編號:: IGW50N65F5FKSA1
製造商:: Infineon

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選取全部	屬性	值
	品牌	Infineon
	Maximum Continuous Collector Current	80 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	305 W
	Package Type	PG-TO247-3

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	品牌 Infineon
	Maximum Continuous Collector Current 80 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 305 W
	Package Type PG-TO247-3

Datasheet - IGW50N65F5FKSA1

The Infineon new TRENCHSTOPIGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow. It has best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability. 50V increase in the bus voltage possible without compromising reliability.

650V breakthrough voltage
Compared to Infineon’s Best-in-class HighSpeed 3 family
Factor 2.5 lower Q g
Factor 2 reduction in switching losses
200mV reduction in V CE(sat)
Low C OES/E OSS
Mild positive temperature coefficient V CE(sat)
Temperature stabilit

Infineon IGW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3

訂單超過 $1,300.00 免費送貨

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