Infineon IKW40N65RH5XKSA1 Single IGBT Transistor Module, 40 A 650 V PG-TO247-3

可享批量折扣

小計(1 管,共 30 件)*

TWD3,330.00

(不含稅)

TWD3,496.50

(含稅)

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  • 2026年6月17日 發貨
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每單位
每管*
30 - 30TWD111.00TWD3,330.00
60 - 60TWD99.90TWD2,997.00
90 +TWD96.90TWD2,907.00

* 參考價格

RS庫存編號:
249-6938
製造零件編號:
IKW40N65RH5XKSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

15V

Number of Transistors

2

Maximum Power Dissipation

250 W

Configuration

Single

Package Type

PG-TO247-3

The Infineon schottky barrier diode has ultra low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C.

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