Infineon IKW40N65RH5XKSA1 IGBT Module, 40 A 650 V, 3-Pin PG-TO-247
- RS庫存編號:
- 249-6939
- 製造零件編號:
- IKW40N65RH5XKSA1
- 製造商:
- Infineon
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TWD177.00
(不含稅)
TWD185.85
(含稅)
訂單超過 $1,300.00 免費送貨
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| 1 - 4 | TWD177.00 |
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* 參考價格
- RS庫存編號:
- 249-6939
- 製造零件編號:
- IKW40N65RH5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | PG-TO-247 | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC | |
| Height | 5.3mm | |
| Length | 41.9mm | |
| Width | 16.3 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type PG-TO-247 | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC | ||
Height 5.3mm | ||
Length 41.9mm | ||
Width 16.3 mm | ||
Automotive Standard No | ||
The Infineon schottky barrier diode has ultra low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C.
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