Infineon IKW50N65RH5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3
- RS庫存編號:
- 249-6941
- 製造零件編號:
- IKW50N65RH5XKSA1
- 製造商:
- Infineon
可享批量折扣
小計（1 件）*
TWD180.00
(不含稅)
TWD189.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 227 件準備從其他地點送貨
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單位 | 每單位 |
|---|---|
| 1 - 4 | TWD180.00 |
| 5 - 9 | TWD162.00 |
| 10 - 14 | TWD146.00 |
| 15 - 19 | TWD131.00 |
| 20 + | TWD128.00 |
* 參考價格
- RS庫存編號:
- 249-6941
- 製造零件編號:
- IKW50N65RH5XKSA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | 15V | |
| Maximum Power Dissipation | 305 W | |
| Number of Transistors | 2 | |
| Configuration | Single | |
| Package Type | PG-TO247-3 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage 15V | ||
Maximum Power Dissipation 305 W | ||
Number of Transistors 2 | ||
Configuration Single | ||
Package Type PG-TO247-3 | ||
The Infineon TRENCHSTOP5 H5 IGBT co-packed with half-rated 6th generation CoolSiCTM schottky barrier diode. Ultra-low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C
Industrial Power Supplies
Industrial SMPS
Energy Generation
Solar String Inverter
Energy Distribution - Energy Storage
Infrastructure Charge - Charger
Industrial SMPS
Energy Generation
Solar String Inverter
Energy Distribution - Energy Storage
Infrastructure Charge - Charger
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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