Infineon IKW50N65WR5XKSA1 IGBT, 50 A 650 V PG-TO247-3
- RS庫存編號:
- 244-2919
- 製造零件編號:
- IKW50N65WR5XKSA1
- 製造商:
- Infineon
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- RS庫存編號:
- 244-2919
- 製造零件編號:
- IKW50N65WR5XKSA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Maximum Power Dissipation | 282 W | |
| Package Type | PG-TO247-3 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage 20V | ||
Maximum Power Dissipation 282 W | ||
Package Type PG-TO247-3 | ||
The Infineon Monolithic diode optimized for PFC and welding applications. It has stable temperature behavior and very low VCEsat and low Eoff also Easy parallel switching capability based on positive temperature coefficient of VCEsat.
Low EMI
Low electrical parameters depending(dependence) on temperature
Qualified according to JESD-022 for target applications
Pb-free lead plating
Ro HS compliant
Complete product spectrum and Pspice Models
Low electrical parameters depending(dependence) on temperature
Qualified according to JESD-022 for target applications
Pb-free lead plating
Ro HS compliant
Complete product spectrum and Pspice Models
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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