Infineon IKW50N65WR5XKSA1 IGBT, 50 A 650 V, 3-Pin PG-TO-247
- RS庫存編號:
- 244-2919
- 製造零件編號:
- IKW50N65WR5XKSA1
- 製造商:
- Infineon
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- RS庫存編號:
- 244-2919
- 製造零件編號:
- IKW50N65WR5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 282W | |
| Package Type | PG-TO-247 | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 16.13 mm | |
| Series | Reverse Conducting | |
| Length | 41.42mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 282W | ||
Package Type PG-TO-247 | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 16.13 mm | ||
Series Reverse Conducting | ||
Length 41.42mm | ||
Automotive Standard No | ||
The Infineon Monolithic diode optimized for PFC and welding applications. It has stable temperature behavior and very low VCEsat and low Eoff also Easy parallel switching capability based on positive temperature coefficient of VCEsat.
Low EMI
Low electrical parameters depending(dependence) on temperature
Qualified according to JESD-022 for target applications
Pb-free lead plating
Ro HS compliant
Complete product spectrum and Pspice Models
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