onsemi, Type N-Channel IGBT-Field Stop II, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 145-3469
- 製造零件編號:
- NGTB40N65FL2WG
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD3,396.00
(不含稅)
TWD3,565.80
(含稅)
添加 30 件 件可免費送貨
暫時缺貨
- 從 2026年5月12日 發貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD113.20 | TWD3,396.00 |
| 60 - 90 | TWD110.70 | TWD3,321.00 |
| 120 + | TWD108.30 | TWD3,249.00 |
* 參考價格
- RS庫存編號:
- 145-3469
- 製造零件編號:
- NGTB40N65FL2WG
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | IGBT-Field Stop II | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 366W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.25 mm | |
| Series | Field Stop | |
| Length | 21.34mm | |
| Standards/Approvals | RoHS | |
| Height | 5.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type IGBT-Field Stop II | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 366W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 16.25 mm | ||
Series Field Stop | ||
Length 21.34mm | ||
Standards/Approvals RoHS | ||
Height 5.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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