onsemi, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole
- RS庫存編號:
- 185-7999
- 製造零件編號:
- FGAF40S65AQ
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 360 件）*
TWD22,212.00
(不含稅)
TWD23,320.80
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 360 個，準備發貨
單位 | 每單位 | 每管* |
|---|---|---|
| 360 - 360 | TWD61.70 | TWD22,212.00 |
| 720 - 1080 | TWD60.40 | TWD21,744.00 |
| 1440 + | TWD59.00 | TWD21,240.00 |
* 參考價格
- RS庫存編號:
- 185-7999
- 製造零件編號:
- FGAF40S65AQ
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 94W | |
| Package Type | TO-3PF | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 19.1mm | |
| Standards/Approvals | Pb-Free and is RoHS | |
| Series | Trench | |
| Automotive Standard | No | |
| Energy Rating | 325mJ | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 94W | ||
Package Type TO-3PF | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 19.1mm | ||
Standards/Approvals Pb-Free and is RoHS | ||
Series Trench | ||
Automotive Standard No | ||
Energy Rating 325mJ | ||
不相容
- COO (Country of Origin):
- KR
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications.
Maximum junction temperature : TJ = 175°C
Positive temperaure co-efficient for easy parallel operating
High current capability
Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A
High input impedance
100% of the Parts tested for ILM
Fast switching
Tightened parameter distribution
IGBT with monolithic reverse conducting diode
Applications
Consumer Appliances
PFC, Welder
Industrial application