Infineon RF Bipolar Transistor, 35 mA NPN, 2.25 V, 4-Pin SOT-343
- RS庫存編號:
- 259-1453
- 製造零件編號:
- BFP840ESDH6327XTSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 3000 件）*
TWD25,200.00
(不含稅)
TWD26,460.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年4月02日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | TWD8.40 | TWD25,200.00 |
* 參考價格
- RS庫存編號:
- 259-1453
- 製造零件編號:
- BFP840ESDH6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 2.25V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 2.9V | |
| Maximum Transition Frequency ft | 80GHz | |
| Minimum DC Current Gain hFE | 150 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 75mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Series | BFP | |
| Length | 2mm | |
| Standards/Approvals | RoHS | |
| Height | 0.9mm | |
| Width | 2.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 2.25V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 2.9V | ||
Maximum Transition Frequency ft 80GHz | ||
Minimum DC Current Gain hFE 150 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 75mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Series BFP | ||
Length 2mm | ||
Standards/Approvals RoHS | ||
Height 0.9mm | ||
Width 2.1mm | ||
Automotive Standard No | ||
The Infineon discrete hetero-junction bipolar transistor (HBT) specifically designed for high performance 5 GHz band. It is satellite communication systems are satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass, Beidou, Galileo).
High gain Gms 22.5 dB at 5.5 GHz, 1.8 V, 10 mA
OIP3 22 dBm at 5.5 GHz, 1.8 V, 10 mA
IC max +35mA
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