Infineon BFR840L3RHESDE6327XTSA1 RF Bipolar Transistor, 35 mA NPN, 2.25 V, 3-Pin TSLP-3-9
- RS庫存編號:
- 258-0650
- 製造零件編號:
- BFR840L3RHESDE6327XTSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
TWD212.00
(不含稅)
TWD222.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 11,600 件準備從其他地點送貨
- 加上 15,000 件從 2026年10月01日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD21.20 | TWD212.00 |
| 20 - 90 | TWD20.50 | TWD205.00 |
| 100 - 240 | TWD19.80 | TWD198.00 |
| 250 - 490 | TWD19.30 | TWD193.00 |
| 500 + | TWD18.90 | TWD189.00 |
* 參考價格
- RS庫存編號:
- 258-0650
- 製造零件編號:
- BFR840L3RHESDE6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 2.25V | |
| Package Type | TSLP-3-9 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 2.9V | |
| Minimum DC Current Gain hFE | 150 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 75GHz | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 75mW | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFR840L3RHESD | |
| Width | 0.6mm | |
| Height | 0.31mm | |
| Length | 1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 2.25V | ||
Package Type TSLP-3-9 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 2.9V | ||
Minimum DC Current Gain hFE 150 | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 75GHz | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 75mW | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Series BFR840L3RHESD | ||
Width 0.6mm | ||
Height 0.31mm | ||
Length 1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon SiGe C NPN RF bipolar transistor is a discrete RF heterojunction bipolar transistor with an integrated ESD protection suitable for 5 GHz band applications.
Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V
Low profile and small form factor leadless package
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