Infineon RF Bipolar Transistor, 35 mA NPN, 2.25 V, 3-Pin TSLP-3-9
- RS庫存編號:
- 258-0649
- 製造零件編號:
- BFR840L3RHESDE6327XTSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 15000 件）*
TWD207,000.00
(不含稅)
TWD217,350.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 15,000 件從 2026年10月01日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 15000 - 15000 | TWD13.80 | TWD207,000.00 |
| 30000 + | TWD13.40 | TWD201,000.00 |
* 參考價格
- RS庫存編號:
- 258-0649
- 製造零件編號:
- BFR840L3RHESDE6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 2.25V | |
| Package Type | TSLP-3-9 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 2.9V | |
| Maximum Transition Frequency ft | 75GHz | |
| Transistor Polarity | NPN | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 75mW | |
| Minimum DC Current Gain hFE | 150 | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.6mm | |
| Standards/Approvals | RoHS | |
| Series | BFR840L3RHESD | |
| Length | 1mm | |
| Height | 0.31mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 2.25V | ||
Package Type TSLP-3-9 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 2.9V | ||
Maximum Transition Frequency ft 75GHz | ||
Transistor Polarity NPN | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 75mW | ||
Minimum DC Current Gain hFE 150 | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Width 0.6mm | ||
Standards/Approvals RoHS | ||
Series BFR840L3RHESD | ||
Length 1mm | ||
Height 0.31mm | ||
Automotive Standard No | ||
The Infineon SiGe C NPN RF bipolar transistor is a discrete RF heterojunction bipolar transistor with an integrated ESD protection suitable for 5 GHz band applications.
Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V
Low profile and small form factor leadless package
相關連結
- Infineon BFR840L3RHESDE6327XTSA1 RF Bipolar Transistor 2.25 V, 3-Pin TSLP-3-9
- Infineon NPN RF Bipolar Transistor 4 V, 4-Pin TSLP
- Infineon BFR740L3RHE6327XTSA1 NPN RF Bipolar Transistor 4 V, 4-Pin TSLP
- Infineon RF Bipolar Transistor 2.25 V, 4-Pin SOT-343
- Infineon BFP840ESDH6327XTSA1 RF Bipolar Transistor 2.25 V, 4-Pin SOT-343
- Infineon Broadband RF Bipolar Transistor 2.25 V, 4-Pin SOT-343
- Infineon Bipolar Transistor 15 V, 3-Pin TSLP-3-1
- Infineon BFP843H6327XTSA1 Broadband RF Bipolar Transistor 2.25 V, 4-Pin SOT-343