Infineon BFR380FH6327XTSA1 RF Bipolar Transistor, 80 mA NPN, 15 V, 3-Pin TSFP-3-1
- RS庫存編號:
- 259-1457
- 製造零件編號:
- BFR380FH6327XTSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 3000 件）*
TWD14,400.00
(不含稅)
TWD15,120.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 3,000 件從 2026年11月02日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | TWD4.80 | TWD14,400.00 |
* 參考價格
- RS庫存編號:
- 259-1457
- 製造零件編號:
- BFR380FH6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 80mA | |
| Maximum Collector Emitter Voltage Vceo | 15V | |
| Package Type | TSFP-3-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 14GHz | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 380mW | |
| Minimum DC Current Gain hFE | 90 | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 1.2mm | |
| Series | BFR | |
| Height | 550μm | |
| Length | 1.2mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 80mA | ||
Maximum Collector Emitter Voltage Vceo 15V | ||
Package Type TSFP-3-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 14GHz | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 380mW | ||
Minimum DC Current Gain hFE 90 | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 1.2mm | ||
Series BFR | ||
Height 550μm | ||
Length 1.2mm | ||
Automotive Standard No | ||
The Infineon NPN silicon RF transistor has collector design which supports 5V supply voltage. It is Ideal for oscillators up to 3.5 GHz.
High linearity low noise driver amplifier
Low noise figure 1.1 dB at 1.8 GHz
Pb-free (RoHS compliant) package
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