Infineon RF Bipolar Transistor, 50 mA NPN, 10 V, 4-Pin TSFP-4-1
- RS庫存編號:
- 259-1428
- 製造零件編號:
- BFP520H6327XTSA1
- 製造商:
- Infineon
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- RS庫存編號:
- 259-1428
- 製造零件編號:
- BFP520H6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 10V | |
| Package Type | TSFP-4-1 | |
| Mount Type | Surface | |
| Transistor Configuration | Common Emitter | |
| Maximum Collector Base Voltage VCBO | 10V | |
| Minimum DC Current Gain hFE | 70 | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 120mW | |
| Maximum Transition Frequency ft | 45GHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Length | 2mm | |
| Height | 0.9mm | |
| Series | BFP520F | |
| Standards/Approvals | RoHS | |
| Width | 1.25mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 10V | ||
Package Type TSFP-4-1 | ||
Mount Type Surface | ||
Transistor Configuration Common Emitter | ||
Maximum Collector Base Voltage VCBO 10V | ||
Minimum DC Current Gain hFE 70 | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 120mW | ||
Maximum Transition Frequency ft 45GHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Length 2mm | ||
Height 0.9mm | ||
Series BFP520F | ||
Standards/Approvals RoHS | ||
Width 1.25mm | ||
Automotive Standard No | ||
The Infineon NPN silicon RF transistor. It is various applications like cellular and Cordless phones, DECT, Tuners, FM, and RF modems.
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT 8 GHz, NFmin 1 dB at 900 MHz
Pb-free (RoHS compliant) package
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