Infineon BFP740H6327XTSA1 RF Bipolar Transistor, 45 mA NPN, 4.2 V, 4-Pin TSFP-4-1
- RS庫存編號:
- 259-1452
- 製造零件編號:
- BFP740H6327XTSA1
- 製造商:
- Infineon
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- RS庫存編號:
- 259-1452
- 製造零件編號:
- BFP740H6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 45mA | |
| Maximum Collector Emitter Voltage Vceo | 4.2V | |
| Package Type | TSFP-4-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Minimum DC Current Gain hFE | 160 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 47GHz | |
| Maximum Power Dissipation Pd | 44mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Height | 0.9mm | |
| Length | 2mm | |
| Standards/Approvals | RoHS | |
| Width | 1.25mm | |
| Series | BFP | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 45mA | ||
Maximum Collector Emitter Voltage Vceo 4.2V | ||
Package Type TSFP-4-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Minimum DC Current Gain hFE 160 | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 47GHz | ||
Maximum Power Dissipation Pd 44mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Height 0.9mm | ||
Length 2mm | ||
Standards/Approvals RoHS | ||
Width 1.25mm | ||
Series BFP | ||
Automotive Standard No | ||
The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT) with an integrated ESD protection. It is unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits.
NFmin 0.6 dB at 2.4 GHz and 0.8 dB at 5.5 GHz, 3V, 6 mA
High gain Gms 26 dB at 2.4 GHz and Gma 20.5 dB at 5.5 GHz, 3V, 25 mA
OIP3 23.5 dBm at 5.5 GHz, 25 mA
Low profile and small form factor leadless package
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