Infineon BFP640FH6327XTSA1 NPN RF Bipolar Transistor, 50 mA NPN, 4 V, 4-Pin TSFP
- RS庫存編號:
- 216-8352
- 製造零件編號:
- BFP640FH6327XTSA1
- 製造商:
- Infineon
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查看批量定價選項小計（1 包，共 50 件）*
TWD570.00
(不含稅)
TWD598.50
(含稅)
訂單超過 $1,300.00 免費送貨
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- 2,600 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 700 | TWD11.40 | TWD570.00 |
| 750 - 1450 | TWD11.00 | TWD550.00 |
| 1500 + | TWD10.70 | TWD535.00 |
* 參考價格
- RS庫存編號:
- 216-8352
- 製造零件編號:
- BFP640FH6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | NPN RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 4V | |
| Package Type | TSFP | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Power Dissipation Pd | 200mW | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 110 | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Maximum Transition Frequency ft | 42GHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Series | BFP640F | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type NPN RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 4V | ||
Package Type TSFP | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Power Dissipation Pd 200mW | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 110 | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Maximum Transition Frequency ft 42GHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Series BFP640F | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon BFP series is a RF bipolar transistor based on silicon germanium technology. Its transition frequency of 42 GHz and high linearity characteristics at low currents make the device suitable for energy efficiency designs at frequency as high as 8 GHz. It remains cost competitive without compromising on ease of use.
Provides outstanding performance for a wide range of wireless applications
Ideal for CDMA and WLAN applications
High maximum stable gain
Gold metallization for extra high reliability
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