Infineon Bipolar Transistor, 80 mA NPN, 15 V, 3-Pin TSLP-3-1
- RS庫存編號:
- 258-6998
- 製造零件編號:
- BFR380L3E6327XTMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 15000 件）*
TWD67,500.00
(不含稅)
TWD70,800.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年11月23日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 15000 - 30000 | TWD4.50 | TWD67,500.00 |
| 45000 + | TWD4.40 | TWD66,000.00 |
* 參考價格
- RS庫存編號:
- 258-6998
- 製造零件編號:
- BFR380L3E6327XTMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 80mA | |
| Maximum Collector Emitter Voltage Vceo | 15V | |
| Package Type | TSLP-3-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 14GHz | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Minimum DC Current Gain hFE | 160 | |
| Maximum Power Dissipation Pd | 380mW | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 1mm | |
| Width | 0.6mm | |
| Series | BFR380L3 | |
| Height | 0.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 80mA | ||
Maximum Collector Emitter Voltage Vceo 15V | ||
Package Type TSLP-3-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 14GHz | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Minimum DC Current Gain hFE 160 | ||
Maximum Power Dissipation Pd 380mW | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 1mm | ||
Width 0.6mm | ||
Series BFR380L3 | ||
Height 0.4mm | ||
Automotive Standard No | ||
The Infineon low profile linear silicon NPN RF bipolar transistor is a low noise device based on Si that is part of Infineon’s established third generation RF bipolar transistor family. Its high transition frequency and low current and low noise characteristics make the device suitable for a broad range of applications as high as 3.5 GHz. It remains cost competitive without compromising on ease of use.
High current capability and low noise figure for wide dynamic range
Low voltage operation
Pb free RoHS compliant package
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