Infineon Bipolar Transistor, 80 mA NPN, 15 V, 3-Pin TSLP-3-1
- RS庫存編號:
- 258-6998
- 製造零件編號:
- BFR380L3E6327XTMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 15000 件）*
TWD67,500.00
(不含稅)
TWD70,800.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 15,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 15000 - 30000 | TWD4.50 | TWD67,500.00 |
| 45000 + | TWD4.40 | TWD66,000.00 |
* 參考價格
- RS庫存編號:
- 258-6998
- 製造零件編號:
- BFR380L3E6327XTMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 80mA | |
| Maximum Collector Emitter Voltage Vceo | 15V | |
| Package Type | TSLP-3-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Transition Frequency ft | 14GHz | |
| Maximum Power Dissipation Pd | 380mW | |
| Minimum DC Current Gain hFE | 160 | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Height | 0.4mm | |
| Standards/Approvals | RoHS | |
| Series | BFR380L3 | |
| Length | 1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 80mA | ||
Maximum Collector Emitter Voltage Vceo 15V | ||
Package Type TSLP-3-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Transition Frequency ft 14GHz | ||
Maximum Power Dissipation Pd 380mW | ||
Minimum DC Current Gain hFE 160 | ||
Transistor Polarity NPN | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Height 0.4mm | ||
Standards/Approvals RoHS | ||
Series BFR380L3 | ||
Length 1mm | ||
Automotive Standard No | ||
The Infineon low profile linear silicon NPN RF bipolar transistor is a low noise device based on Si that is part of Infineon’s established third generation RF bipolar transistor family. Its high transition frequency and low current and low noise characteristics make the device suitable for a broad range of applications as high as 3.5 GHz. It remains cost competitive without compromising on ease of use.
High current capability and low noise figure for wide dynamic range
Low voltage operation
Pb free RoHS compliant package
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