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Infineon NPN RF Bipolar Transistor, 40 mA NPN, 4 V, 4-Pin TSLP

Name: Infineon NPN RF Bipolar Transistor, 40 mA NPN, 4 V, 4-Pin TSLP
Brand: Infineon
SKU: 219-5958
Availability: BackOrder

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小計（1 卷，共 15000 件）*

TWD207,000.00

(不含稅)

TWD217,350.00

(含稅)

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單位	每單位	每卷*
15000 - 60000	TWD13.80	TWD207,000.00
75000 +	TWD13.40	TWD201,000.00

* 參考價格

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Product Type	NPN RF Bipolar Transistor
	Maximum DC Collector Current Idc	40mA
	Maximum Collector Emitter Voltage Vceo	4V
	Package Type	TSLP
	Mount Type	Surface
	Maximum Collector Base Voltage VCBO	13V
	Maximum Power Dissipation Pd	160mW
	Maximum Transition Frequency ft	42GHz
	Minimum Operating Temperature	-55°C
	Transistor Polarity	NPN
	Minimum DC Current Gain hFE	160
	Maximum Emitter Base Voltage VEBO	1.2V
	Pin Count	4
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC47/20/22
	Series	BFR740L3RH
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type NPN RF Bipolar Transistor
	Maximum DC Collector Current Idc 40mA
	Maximum Collector Emitter Voltage Vceo 4V
	Package Type TSLP
	Mount Type Surface
	Maximum Collector Base Voltage VCBO 13V
	Maximum Power Dissipation Pd 160mW
	Maximum Transition Frequency ft 42GHz
	Minimum Operating Temperature -55°C
	Transistor Polarity NPN
	Minimum DC Current Gain hFE 160
	Maximum Emitter Base Voltage VEBO 1.2V
	Pin Count 4
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC47/20/22
	Series BFR740L3RH
	Automotive Standard No

The Infineon BFP740L3RH is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).

Low noise figure NFmin = 0.5 dB at 1.9 GHz, 0.8 dB at 5.5 GHz, 3 V, 6 mA

High power gain Gms = 20 dB at 5.5 GHz, 3 V, 15 mA

Low profile and small form factor leadless package

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