Infineon BFP843H6327XTSA1 Broadband RF Bipolar Transistor, 55 mA NPN, 2.25 V, 4-Pin SOT-343
- RS庫存編號:
- 216-8356
- 製造零件編號:
- BFP843H6327XTSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 包，共 50 件）*
TWD1,075.00
(不含稅)
TWD1,129.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,900 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 700 | TWD21.50 | TWD1,075.00 |
| 750 - 1450 | TWD20.80 | TWD1,040.00 |
| 1500 + | TWD20.20 | TWD1,010.00 |
* 參考價格
- RS庫存編號:
- 216-8356
- 製造零件編號:
- BFP843H6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Broadband RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 55mA | |
| Maximum Collector Emitter Voltage Vceo | 2.25V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Maximum Collector Base Voltage VCBO | 2.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125mW | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 150 | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFP843 | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Broadband RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 55mA | ||
Maximum Collector Emitter Voltage Vceo 2.25V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Maximum Collector Base Voltage VCBO 2.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125mW | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 150 | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Series BFP843 | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon BFP series is a robust low noise broadband pre-matched RF heterojunction bipolar transistor. It is suitable for low voltage applications like wireless communications, satellite communication systems and navigation systems.
High transition frequency enables best in class noise performance at high frequencies
Unique combination of high end RF performance and robustness
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