Infineon BFP842ESDH6327XTSA1 RF Bipolar Transistor, 40 mA NPN, 3.25 V, 4-Pin SOT-343
- RS庫存編號:
- 170-2366
- 製造零件編號:
- BFP842ESDH6327XTSA1
- 製造商:
- Infineon
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- RS庫存編號:
- 170-2366
- 製造零件編號:
- BFP842ESDH6327XTSA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 40mA | |
| Maximum Collector Emitter Voltage Vceo | 3.25V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 4.1V | |
| Maximum Transition Frequency ft | 57GHz | |
| Maximum Emitter Base Voltage VEBO | 4.1V | |
| Maximum Power Dissipation Pd | 120mW | |
| Minimum Operating Temperature | -55°C | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Width | 1.25mm | |
| Length | 2.1mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | BFP842ESD | |
| Height | 1.3mm | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 40mA | ||
Maximum Collector Emitter Voltage Vceo 3.25V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 4.1V | ||
Maximum Transition Frequency ft 57GHz | ||
Maximum Emitter Base Voltage VEBO 4.1V | ||
Maximum Power Dissipation Pd 120mW | ||
Minimum Operating Temperature -55°C | ||
Transistor Polarity NPN | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Width 1.25mm | ||
Length 2.1mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Series BFP842ESD | ||
Height 1.3mm | ||
The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5 GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP842ESD provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the application.
Robust very low noise amplifier based on Infineon's reliable, high volume
SiGe:C technology
Unique combination of high end RF performance and robustness
High linearity
High transition frequency
Transducer gain
Ideal for low voltage applications
Low power consumption, ideal for mobile applications
Easy to use Pb free and halogen free industry standard package with visible leads
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