Infineon RF Bipolar Transistor, 25 mA NPN, 15 V, 4-Pin SOT-343
- RS庫存編號:
- 259-1418
- 製造零件編號:
- BFP405FH6327XTSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 3000 件）*
TWD22,500.00
(不含稅)
TWD23,640.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 15,000 件從 2026年9月07日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | TWD7.50 | TWD22,500.00 |
* 參考價格
- RS庫存編號:
- 259-1418
- 製造零件編號:
- BFP405FH6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 25mA | |
| Maximum Collector Emitter Voltage Vceo | 15V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 25GHz | |
| Maximum Power Dissipation Pd | 75mW | |
| Minimum DC Current Gain hFE | 60 | |
| Maximum Emitter Base Voltage VEBO | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Height | 0.55mm | |
| Series | BFP405 | |
| Width | 1.2mm | |
| Standards/Approvals | RoHS | |
| Length | 1.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 25mA | ||
Maximum Collector Emitter Voltage Vceo 15V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Minimum Operating Temperature -55°C | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 25GHz | ||
Maximum Power Dissipation Pd 75mW | ||
Minimum DC Current Gain hFE 60 | ||
Maximum Emitter Base Voltage VEBO 1.5V | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Height 0.55mm | ||
Series BFP405 | ||
Width 1.2mm | ||
Standards/Approvals RoHS | ||
Length 1.4mm | ||
Automotive Standard No | ||
The Infineon NPN Silicon RF transistor is used for low current applications. For oscillators up to 12 GHz.
Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz
Pb-free (RoHS compliant) package
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