Infineon RF Bipolar Transistor, 40 mA NPN, 4.5 V, 4-Pin SOT-343
- RS庫存編號:
- 273-7298
- 製造零件編號:
- BFP410H6327XTSA1
- 製造商:
- Infineon
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查看批量定價選項小計（1 包，共 25 件）*
TWD280.00
(不含稅)
TWD294.00
(含稅)
訂單超過 $1,300.00 免費送貨
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- 2,700 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD11.20 | TWD280.00 |
| 50 - 75 | TWD11.00 | TWD275.00 |
| 100 - 225 | TWD10.80 | TWD270.00 |
| 250 - 975 | TWD10.50 | TWD262.50 |
| 1000 + | TWD10.30 | TWD257.50 |
* 參考價格
- RS庫存編號:
- 273-7298
- 製造零件編號:
- BFP410H6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 40mA | |
| Maximum Collector Emitter Voltage Vceo | 4.5V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Emitter Base Voltage VEBO | 1.5V | |
| Minimum DC Current Gain hFE | 60 | |
| Maximum Transition Frequency ft | 25GHz | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 150mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Series | BFP | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 40mA | ||
Maximum Collector Emitter Voltage Vceo 4.5V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Emitter Base Voltage VEBO 1.5V | ||
Minimum DC Current Gain hFE 60 | ||
Maximum Transition Frequency ft 25GHz | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 150mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Series BFP | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon NPN RF bipolar transistor is a low noise device based on a grounded emitter that is part of Infineon established fourth generation RF bipolar transistor family. Its transition frequency fT of 25 GHz and low current characteristics make the device suitable for high frequency oscillators. It remains cost competitive without compromising on ease of use.
High gain
Minimum noise figure
Suitable for broadband low noise amplifiers
LNAs for sub 1 GHz ISM band applications
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