Infineon RF Bipolar Transistor, 40 mA NPN, 4.5 V, 4-Pin SOT-343
- RS庫存編號:
- 273-7298
- 製造零件編號:
- BFP410H6327XTSA1
- 製造商:
- Infineon
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TWD280.00
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TWD294.00
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 | 每包* | 節省 |
|---|---|---|---|
| 25 - 25 | TWD11.20 | TWD280.00 | - |
| 50 - 75 | TWD11.00 | TWD275.00 | 1% |
| 100 - 225 | TWD10.80 | TWD270.00 | 3% |
| 250 - 975 | TWD10.50 | TWD262.50 | 6% |
| 1000 + | TWD10.30 | TWD257.50 | 8% |
* 參考價格
- RS庫存編號:
- 273-7298
- 製造零件編號:
- BFP410H6327XTSA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 40mA | |
| Maximum Collector Emitter Voltage Vceo | 4.5V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Transition Frequency ft | 25GHz | |
| Minimum Operating Temperature | -55°C | |
| Minimum DC Current Gain hFE | 60 | |
| Maximum Emitter Base Voltage VEBO | 1.5V | |
| Maximum Power Dissipation Pd | 150mW | |
| Transistor Polarity | NPN | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFP | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 40mA | ||
Maximum Collector Emitter Voltage Vceo 4.5V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Transition Frequency ft 25GHz | ||
Minimum Operating Temperature -55°C | ||
Minimum DC Current Gain hFE 60 | ||
Maximum Emitter Base Voltage VEBO 1.5V | ||
Maximum Power Dissipation Pd 150mW | ||
Transistor Polarity NPN | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Series BFP | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon NPN RF bipolar transistor is a low noise device based on a grounded emitter that is part of Infineon established fourth generation RF bipolar transistor family. Its transition frequency fT of 25 GHz and low current characteristics make the device suitable for high frequency oscillators. It remains cost competitive without compromising on ease of use.
High gain
Minimum noise figure
Suitable for broadband low noise amplifiers
LNAs for sub 1 GHz ISM band applications
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