Infineon BFP640ESDH6327XTSA1 RF Bipolar Transistor, 50 mA NPN, 13 V, 4-Pin SOT-343
- RS庫存編號:
- 259-1438
- 製造零件編號:
- BFP640ESDH6327XTSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 3000 件）*
TWD24,000.00
(不含稅)
TWD25,200.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年5月10日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | TWD8.00 | TWD24,000.00 |
* 參考價格
- RS庫存編號:
- 259-1438
- 製造零件編號:
- BFP640ESDH6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 13V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Power Dissipation Pd | 200mW | |
| Minimum DC Current Gain hFE | 110 | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 70GHz | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Length | 2mm | |
| Height | 900μm | |
| Width | 2.1mm | |
| Standards/Approvals | Pb-Free (RoHS) | |
| Series | BFP640 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 13V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Power Dissipation Pd 200mW | ||
Minimum DC Current Gain hFE 110 | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 70GHz | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Length 2mm | ||
Height 900μm | ||
Width 2.1mm | ||
Standards/Approvals Pb-Free (RoHS) | ||
Series BFP640 | ||
Automotive Standard AEC-Q101 | ||
The Infineon high gain low noise RF transistor provides outstanding performance for a wide range of wireless applications & Ideal for CDMA and WLAN applications.
Gold metallization for extra high reliability
70 GHz fT-Silicon Germanium technology
Pb-free (RoHS compliant) package
相關連結
- Infineon BFP640ESDH6327XTSA1 RF Bipolar Transistor 13 V, 4-Pin SOT-343
- Infineon BFP740FH6327XTSA1 RF Bipolar Transistor 13 V, 4-Pin SOT-343
- Infineon BFP650FH6327XTSA1 RF Bipolar Transistor 13 V, 4-Pin SOT-343
- Infineon BFP740FESDH6327XTSA1 RF Bipolar Transistor 13 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 20 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 4.5 V, 4-Pin SOT-343
- Infineon BFP520FH6327XTSA1 RF Bipolar Transistor 10 V, 4-Pin SOT-343
- Infineon BFP740ESDH6327XTSA1 RF Bipolar Transistor 4.2 V, 4-Pin SOT-343