Infineon BFR183E6327HTSA1 Bipolar Transistor, 65 mA NPN, 20 V, 3-Pin SOT-23
- RS庫存編號:
- 258-7737
- 製造零件編號:
- BFR183E6327HTSA1
- 製造商:
- Infineon
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TWD177.50
(不含稅)
TWD186.50
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD7.10 | TWD177.50 |
| 50 - 75 | TWD6.90 | TWD172.50 |
| 100 - 225 | TWD6.60 | TWD165.00 |
| 250 - 975 | TWD6.50 | TWD162.50 |
| 1000 + | TWD6.40 | TWD160.00 |
* 參考價格
- RS庫存編號:
- 258-7737
- 製造零件編號:
- BFR183E6327HTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 65mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 450mW | |
| Minimum DC Current Gain hFE | 70 | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 8GHz | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Width | 2.4mm | |
| Height | 1mm | |
| Standards/Approvals | RoHS | |
| Series | BFR183 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 65mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 450mW | ||
Minimum DC Current Gain hFE 70 | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 8GHz | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Width 2.4mm | ||
Height 1mm | ||
Standards/Approvals RoHS | ||
Series BFR183 | ||
Automotive Standard AEC-Q101 | ||
The Infineon low noise silicon bipolar RF transistor is for low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications
Pb free RoHS compliant package
VCEO max is 12 V
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