Infineon BFR181E6327HTSA1 Bipolar Transistor, 20 mA NPN, 20 V, 3-Pin SOT-23
- RS庫存編號:
- 258-7710
- Distrelec 貨號:
- 304-40-490
- 製造零件編號:
- BFR181E6327HTSA1
- 製造商:
- Infineon
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TWD162.50
(不含稅)
TWD170.50
(含稅)
訂單超過 $1,300.00 免費送貨
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- 2,450 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD6.50 | TWD162.50 |
| 50 - 75 | TWD6.30 | TWD157.50 |
| 100 - 225 | TWD5.80 | TWD145.00 |
| 250 - 975 | TWD5.50 | TWD137.50 |
| 1000 + | TWD5.30 | TWD132.50 |
* 參考價格
- RS庫存編號:
- 258-7710
- Distrelec 貨號:
- 304-40-490
- 製造零件編號:
- BFR181E6327HTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 20mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 3GHz | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Power Dissipation Pd | 175mW | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 70 | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 125°C | |
| Height | 1mm | |
| Width | 2.4mm | |
| Series | BAR63 | |
| Standards/Approvals | RoHS | |
| Length | 2.9mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 20mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 3GHz | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Power Dissipation Pd 175mW | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 70 | ||
Pin Count 3 | ||
Maximum Operating Temperature 125°C | ||
Height 1mm | ||
Width 2.4mm | ||
Series BAR63 | ||
Standards/Approvals RoHS | ||
Length 2.9mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor is for low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications.
Pb free RoHS compliant package
VCEO max is 12 V
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