Infineon Bipolar Transistor, 35 mA NPN, 20 V, 3-Pin SOT-23
- RS庫存編號:
- 258-6993
- 製造零件編號:
- BFR182E6327HTSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD13,500.00
(不含稅)
TWD14,160.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年12月21日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD4.50 | TWD13,500.00 |
| 6000 + | TWD4.40 | TWD13,200.00 |
* 參考價格
- RS庫存編號:
- 258-6993
- 製造零件編號:
- BFR182E6327HTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 8GHz | |
| Maximum Power Dissipation Pd | 250mW | |
| Minimum Operating Temperature | -65°C | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 2.9mm | |
| Series | BFR182 | |
| Width | 2.4mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 8GHz | ||
Maximum Power Dissipation Pd 250mW | ||
Minimum Operating Temperature -65°C | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 2.9mm | ||
Series BFR182 | ||
Width 2.4mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor is for low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications.
Pb free RoHS compliant package
VCEO max is 12 V
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