Infineon BFR193E6327HTSA1 Bipolar Transistor, 80 mA NPN, 12 V, 3-Pin SOT-23
- RS庫存編號:
- 823-5538
- 製造零件編號:
- BFR193E6327HTSA1
- 製造商:
- Infineon
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- RS庫存編號:
- 823-5538
- 製造零件編號:
- BFR193E6327HTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 80mA | |
| Maximum Collector Emitter Voltage Vceo | 12V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Transition Frequency ft | 8GHz | |
| Maximum Power Dissipation Pd | 580mW | |
| Transistor Polarity | NPN | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Width | 2.4mm | |
| Series | BFR193 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 80mA | ||
Maximum Collector Emitter Voltage Vceo 12V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Transition Frequency ft 8GHz | ||
Maximum Power Dissipation Pd 580mW | ||
Transistor Polarity NPN | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Width 2.4mm | ||
Series BFR193 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
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