Infineon BFP540ESDH6327XTSA1 RF Bipolar Transistor, 80 mA NPN, 10 V, 4-Pin SOT-343
- RS庫存編號:
- 259-1432
- 製造零件編號:
- BFP540ESDH6327XTSA1
- 製造商:
- Infineon
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查看批量定價選項小計（1 包，共 25 件）*
TWD280.00
(不含稅)
TWD294.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,300 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD11.20 | TWD280.00 |
| 50 - 75 | TWD10.70 | TWD267.50 |
| 100 - 225 | TWD10.00 | TWD250.00 |
| 250 - 975 | TWD9.30 | TWD232.50 |
| 1000 + | TWD9.10 | TWD227.50 |
* 參考價格
- RS庫存編號:
- 259-1432
- 製造零件編號:
- BFP540ESDH6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 80mA | |
| Maximum Collector Emitter Voltage Vceo | 10V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 10V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 30GHz | |
| Maximum Emitter Base Voltage VEBO | 1V | |
| Minimum DC Current Gain hFE | 50 | |
| Maximum Power Dissipation Pd | 250mW | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Length | 2mm | |
| Height | 0.9mm | |
| Series | BFP540 | |
| Width | 1.25mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 80mA | ||
Maximum Collector Emitter Voltage Vceo 10V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 10V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 30GHz | ||
Maximum Emitter Base Voltage VEBO 1V | ||
Minimum DC Current Gain hFE 50 | ||
Maximum Power Dissipation Pd 250mW | ||
Transistor Polarity NPN | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Length 2mm | ||
Height 0.9mm | ||
Series BFP540 | ||
Width 1.25mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon NPN silicon RF transistor for ESD protected high gain low noise amplifier. It has excellent ESD performance typical Value 1000 V (HBM).
Outstanding Gms 21.5 dB
Noise figure F 0.9 dB
Gold metallization for high reliability
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