Infineon BFP540ESDH6327XTSA1 RF Bipolar Transistor, 80 mA NPN, 10 V, 4-Pin SOT-343
- RS庫存編號:
- 259-1431
- 製造零件編號:
- BFP540ESDH6327XTSA1
- 製造商:
- Infineon
小計（1 卷，共 3000 件）*
TWD24,900.00
(不含稅)
TWD26,160.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年5月06日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | TWD8.30 | TWD24,900.00 |
* 參考價格
- RS庫存編號:
- 259-1431
- 製造零件編號:
- BFP540ESDH6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 80mA | |
| Maximum Collector Emitter Voltage Vceo | 10V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 10V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 30GHz | |
| Maximum Power Dissipation Pd | 250mW | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 50 | |
| Maximum Emitter Base Voltage VEBO | 1V | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFP540 | |
| Standards/Approvals | RoHS | |
| Length | 2mm | |
| Width | 1.25mm | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 80mA | ||
Maximum Collector Emitter Voltage Vceo 10V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 10V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 30GHz | ||
Maximum Power Dissipation Pd 250mW | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 50 | ||
Maximum Emitter Base Voltage VEBO 1V | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Series BFP540 | ||
Standards/Approvals RoHS | ||
Length 2mm | ||
Width 1.25mm | ||
Height 0.9mm | ||
Automotive Standard No | ||
The Infineon NPN silicon RF transistor for ESD protected high gain low noise amplifier. It has excellent ESD performance typical Value 1000 V (HBM).
Outstanding Gms 21.5 dB
Noise figure F 0.9 dB
Gold metallization for high reliability
相關連結
- Infineon BFP540ESDH6327XTSA1 RF Bipolar Transistor 10 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 20 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 80 V, 4-Pin SOT-343
- Infineon BFP620H7764XTSA1 RF Bipolar Transistor 80 V, 4-Pin SOT-343
- Infineon BFP193WH6327XTSA1 RF Bipolar Transistor 20 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 15 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 13 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 20 V, 4-Pin SOT-343