Infineon RF Bipolar Transistor, 65 mA NPN, 20 V, 6-Pin SOT-363
- RS庫存編號:
- 259-1459
- 製造零件編號:
- BFS483H6327XTSA1
- 製造商:
- Infineon
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- RS庫存編號:
- 259-1459
- 製造零件編號:
- BFS483H6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 65mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Transistor Configuration | Isolated | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum Operating Temperature | -65°C | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Transition Frequency ft | 8GHz | |
| Maximum Power Dissipation Pd | 450mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 6 | |
| Width | 2mm | |
| Standards/Approvals | RoHS | |
| Height | 0.9mm | |
| Series | BFS | |
| Length | 2.1mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 65mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Transistor Configuration Isolated | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum Operating Temperature -65°C | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Transition Frequency ft 8GHz | ||
Maximum Power Dissipation Pd 450mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 6 | ||
Width 2mm | ||
Standards/Approvals RoHS | ||
Height 0.9mm | ||
Series BFS | ||
Length 2.1mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor for low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA.
Pb-free (RoHS compliant) package
Two (galvanic) internal isolated Transistor in one package
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