Infineon BFS481H6327XTSA1 RF Bipolar Transistor, 20 mA, 20 V, 6-Pin SOT-363
- RS庫存編號:
- 273-7308
- 製造零件編號:
- BFS481H6327XTSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 3000 件）*
TWD27,600.00
(不含稅)
TWD28,980.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 6,000 件從 2026年5月04日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | TWD9.20 | TWD27,600.00 |
* 參考價格
- RS庫存編號:
- 273-7308
- 製造零件編號:
- BFS481H6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 20mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Transistor Configuration | Two (Galvanic) Internal Isolated Transistors In One Package | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum DC Current Gain hFE | 70 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Transition Frequency ft | 8GHz | |
| Maximum Power Dissipation Pd | 175mW | |
| Pin Count | 6 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | BFS481 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 20mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Transistor Configuration Two (Galvanic) Internal Isolated Transistors In One Package | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum DC Current Gain hFE 70 | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Transition Frequency ft 8GHz | ||
Maximum Power Dissipation Pd 175mW | ||
Pin Count 6 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Series BFS481 | ||
Automotive Standard AEC-Q101 | ||
The Infineon Silicon Bipolar RF Transistor is designed for high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. This RF transistor has qualification report according to AEC Q101.
Halogen free
Easy to use
Pb free package
RoHS compliant
With visible leads
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