Infineon BFS483H6327XTSA1 RF Bipolar Transistor, 65 mA NPN, 20 V, 6-Pin SOT-363
- RS庫存編號:
- 259-1460
- 製造零件編號:
- BFS483H6327XTSA1
- 製造商:
- Infineon
可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
TWD146.00
(不含稅)
TWD153.30
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 3,000 件從 2027年1月14日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD14.60 | TWD146.00 |
| 50 - 90 | TWD13.70 | TWD137.00 |
| 100 - 240 | TWD13.10 | TWD131.00 |
| 250 - 990 | TWD12.10 | TWD121.00 |
| 1000 + | TWD11.20 | TWD112.00 |
* 參考價格
- RS庫存編號:
- 259-1460
- 製造零件編號:
- BFS483H6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 65mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Transistor Configuration | Isolated | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Maximum Transition Frequency ft | 8GHz | |
| Maximum Power Dissipation Pd | 450mW | |
| Minimum Operating Temperature | -65°C | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Pin Count | 6 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Series | BFS | |
| Length | 2.1mm | |
| Height | 0.9mm | |
| Width | 2mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 65mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Transistor Configuration Isolated | ||
Maximum Collector Base Voltage VCBO 20V | ||
Maximum Transition Frequency ft 8GHz | ||
Maximum Power Dissipation Pd 450mW | ||
Minimum Operating Temperature -65°C | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Pin Count 6 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Series BFS | ||
Length 2.1mm | ||
Height 0.9mm | ||
Width 2mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor for low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA.
Pb-free (RoHS compliant) package
Two (galvanic) internal isolated Transistor in one package
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