Infineon RF Bipolar Transistor, 65 mA NPN, 20 V, 4-Pin SOT-343
- RS庫存編號:
- 273-7296
- 製造零件編號:
- BFP183WH6327XTSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 25 件）*
TWD160.00
(不含稅)
TWD168.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 12,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD6.40 | TWD160.00 |
| 50 - 75 | TWD6.20 | TWD155.00 |
| 100 - 225 | TWD6.10 | TWD152.50 |
| 250 - 975 | TWD6.00 | TWD150.00 |
| 1000 + | TWD5.90 | TWD147.50 |
* 參考價格
- RS庫存編號:
- 273-7296
- 製造零件編號:
- BFP183WH6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 65mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 8GHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 450mW | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Series | BFP183W | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 65mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Maximum Collector Base Voltage VCBO 20V | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 8GHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 450mW | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Series BFP183W | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon Silicon RF Transistor designed for low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA. This silicon RF transistor has qualification report according to AEC Q101.
Halogen free
Pb free package
RoHS compliant
Available with visible leads
相關連結
- Infineon BFP183WH6327XTSA1 RF Bipolar Transistor 20 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 20 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 12 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 15 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 20 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 4.5 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 80 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 4 V, 4-Pin SOT-343