Infineon RF Bipolar Transistor, 45 mA NPN, 4.2 V, 4-Pin SOT-343
- RS庫存編號:
- 273-7301
- 製造零件編號:
- BFP740ESDH6327XTSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 包，共 25 件）*
TWD302.50
(不含稅)
TWD317.50
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 3,000 件從 2026年11月12日 起裝運發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD12.10 | TWD302.50 |
| 50 - 75 | TWD11.80 | TWD295.00 |
| 100 - 225 | TWD11.10 | TWD277.50 |
| 250 - 975 | TWD10.30 | TWD257.50 |
| 1000 + | TWD10.00 | TWD250.00 |
* 參考價格
- RS庫存編號:
- 273-7301
- 製造零件編號:
- BFP740ESDH6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 45mA | |
| Maximum Collector Emitter Voltage Vceo | 4.2V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Npn Rf Heterojunction Bipolar Transistor (Hbt) | |
| Maximum Collector Base Voltage VCBO | 4.9V | |
| Maximum Transition Frequency ft | 45GHz | |
| Maximum Emitter Base Voltage VEBO | 0.5V | |
| Minimum Operating Temperature | -55°C | |
| Minimum DC Current Gain hFE | 160 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 160mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | BFP740ESD | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 45mA | ||
Maximum Collector Emitter Voltage Vceo 4.2V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Npn Rf Heterojunction Bipolar Transistor (Hbt) | ||
Maximum Collector Base Voltage VCBO 4.9V | ||
Maximum Transition Frequency ft 45GHz | ||
Maximum Emitter Base Voltage VEBO 0.5V | ||
Minimum Operating Temperature -55°C | ||
Minimum DC Current Gain hFE 160 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 160mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Standards/Approvals JEDEC47/20/22 | ||
Series BFP740ESD | ||
Automotive Standard No | ||
The Infineon NPN RF bipolar transistor is a wideband NPN RF heterojunction bipolar transistor with an integrated ESD protection. It is suitable for multimedia applications such as portable TV, CATV and FM radio and ISM applications like RKE, AMR and ZigBee, as well as for emerging wireless applications.
High gain
Robustness
High end RF performance
Suitable for wireless communications
Suitable for satellite communication systems
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