Infineon BFP740ESDH6327XTSA1 RF Bipolar Transistor, 45 mA NPN, 4.2 V, 4-Pin SOT-343

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TWD317.50

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25 - 25TWD12.10TWD302.50
50 - 75TWD11.80TWD295.00
100 - 225TWD11.10TWD277.50
250 - 975TWD10.30TWD257.50
1000 +TWD10.00TWD250.00

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RS庫存編號:
273-7301
製造零件編號:
BFP740ESDH6327XTSA1
製造商:
Infineon
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品牌

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

45mA

Maximum Collector Emitter Voltage Vceo

4.2V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

Npn Rf Heterojunction Bipolar Transistor (Hbt)

Maximum Collector Base Voltage VCBO

4.9V

Transistor Polarity

NPN

Maximum Emitter Base Voltage VEBO

0.5V

Maximum Transition Frequency ft

45GHz

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

160mW

Minimum DC Current Gain hFE

160

Maximum Operating Temperature

150°C

Pin Count

4

Standards/Approvals

JEDEC47/20/22

Series

BFP740ESD

Automotive Standard

No

The Infineon NPN RF bipolar transistor is a wideband NPN RF heterojunction bipolar transistor with an integrated ESD protection. It is suitable for multimedia applications such as portable TV, CATV and FM radio and ISM applications like RKE, AMR and ZigBee, as well as for emerging wireless applications.

High gain

Robustness

High end RF performance

Suitable for wireless communications

Suitable for satellite communication systems

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