製造零件編號

Alliance Memory AS4C16M16SA-7TCN, SDRAM 256Mbit Surface Mount, 166MHz, 3 V to 3.6 V, 54-Pin TSOP

RS庫存編號:: 230-8420
製造零件編號:: AS4C16M16SA-7TCN
製造商:: Alliance Memory

Alliance Memory AS4C16M16SA-7TCN, SDRAM 256Mbit Surface Mount, 166MHz, 3 V to 3.6 V, 54-Pin TSOP

可享批量折扣

小計（1 包，共 2 件）*

TWD263.00

(不含稅)

TWD276.16

訂單超過 $1,300.00 免費送貨

有庫存

6 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每包*
2 - 8	TWD131.50	TWD263.00
10 - 18	TWD128.00	TWD256.00
20 - 48	TWD125.00	TWD250.00
50 - 98	TWD121.00	TWD242.00
100 +	TWD118.50	TWD237.00

* 參考價格

RS庫存編號:: 230-8420
製造零件編號:: AS4C16M16SA-7TCN
製造商:: Alliance Memory

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Alliance Memory
	Memory Size	256Mbit
	SDRAM Class	DDR
	Organisation	16M x 16
	Data Rate	166MHz
	Data Bus Width	16bit
	Address Bus Width	13bit
	Number of Bits per Word	16bit
	Maximum Random Access Time	5.4ns
	Number of Words	16 M
	Mounting Type	Surface Mount
	Package Type	TSOP
	Pin Count	54
	Dimensions	22.35 x 10.29 x 1.2mm
	Height	1.2mm
	Length	22.35mm
	Maximum Operating Temperature	+70 °C
	Minimum Operating Temperature	0 °C
	Maximum Operating Supply Voltage	3.6 V
	Width	10.29mm
	Minimum Operating Supply Voltage	3 V

	選取全部
	品牌 Alliance Memory
	Memory Size 256Mbit
	SDRAM Class DDR
	Organisation 16M x 16
	Data Rate 166MHz
	Data Bus Width 16bit
	Address Bus Width 13bit
	Number of Bits per Word 16bit
	Maximum Random Access Time 5.4ns
	Number of Words 16 M
	Mounting Type Surface Mount
	Package Type TSOP
	Pin Count 54
	Dimensions 22.35 x 10.29 x 1.2mm
	Height 1.2mm
	Length 22.35mm
	Maximum Operating Temperature +70 °C
	Minimum Operating Temperature 0 °C
	Maximum Operating Supply Voltage 3.6 V
	Width 10.29mm
	Minimum Operating Supply Voltage 3 V

Datasheet - AS4C16M16SA-7TCN

The Alliance Memory 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented

accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.

Fast access time from clock: 5/5.4 ns
Fast clock rate: 166/143 MHz
Fully synchronous operation
Internal pipelined architecture
4M word x 16-bit x 4-bank

Alliance Memory AS4C16M16SA-7TCN, SDRAM 256Mbit Surface Mount, 166MHz, 3 V to 3.6 V, 54-Pin TSOP

訂單超過 $1,300.00 免費送貨

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

相關連結