製造零件編號

Alliance Memory SDRAM 256 MB Surface, 54-Pin 16 bit TSOP

RS庫存編號:: 230-8417
製造零件編號:: AS4C16M16SA-6TINTR
製造商:: Alliance Memory

Alliance Memory SDRAM 256 MB Surface, 54-Pin 16 bit TSOP

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 1000 件）*

TWD115,300.00

(不含稅)

TWD121,060.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年4月13日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
1000 - 1000	TWD115.30	TWD115,300.00
2000 +	TWD113.00	TWD113,000.00

* 參考價格

RS庫存編號:: 230-8417
製造零件編號:: AS4C16M16SA-6TINTR
製造商:: Alliance Memory

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Alliance Memory
	Product Type	SDRAM
	Memory Size	256MB
	Organisation	16M x 16 Bit
	Data Bus Width	16bit
	Address Bus Width	13bit
	Number of Bits per Word	16
	Maximum Clock Frequency	166MHz
	Maximum Random Access Time	5ns
	Number of Words	4M
	Mount Type	Surface
	Package Type	TSOP
	Minimum Operating Temperature	-40°C
	Pin Count	54
	Maximum Operating Temperature	85°C
	Length	22.35mm
	Width	10.29 mm
	Height	1.2mm
	Standards/Approvals	No
	Series	AS4C16M16SA-C&I
	Maximum Supply Voltage	3.6V
	Minimum Supply Voltage	3V
	Automotive Standard	No
	Supply Current	60mA

	選取全部
	品牌 Alliance Memory
	Product Type SDRAM
	Memory Size 256MB
	Organisation 16M x 16 Bit
	Data Bus Width 16bit
	Address Bus Width 13bit
	Number of Bits per Word 16
	Maximum Clock Frequency 166MHz
	Maximum Random Access Time 5ns
	Number of Words 4M
	Mount Type Surface
	Package Type TSOP
	Minimum Operating Temperature -40°C
	Pin Count 54
	Maximum Operating Temperature 85°C
	Length 22.35mm
	Width 10.29 mm
	Height 1.2mm
	Standards/Approvals No
	Series AS4C16M16SA-C&I
	Maximum Supply Voltage 3.6V
	Minimum Supply Voltage 3V
	Automotive Standard No
	Supply Current 60mA

Datasheet - AS4C16M16SA-6TINTR

The Alliance Memory 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.

Fast access time from clock: 5/5.4 ns

Fast clock rate: 166/143 MHz

Fully synchronous operation

Internal pipelined architecture

4M word x 16-bit x 4-bank

Alliance Memory SDRAM 256 MB Surface, 54-Pin 16 bit TSOP

訂單超過 $1,300.00 免費送貨

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