Alliance Memory AS4C16M16SA-6TINTR, SDRAM 256Mbit Surface Mount, 166MHz, 3 V to 3.6 V, 54-Pin TSOP

RS庫存編號:: 230-8417
製造零件編號:: AS4C16M16SA-6TINTR
製造商:: Alliance Memory

Alliance Memory AS4C16M16SA-6TINTR, SDRAM 256Mbit Surface Mount, 166MHz, 3 V to 3.6 V, 54-Pin TSOP

可享批量折扣

小計（1 卷，共 1000 件）*

TWD115,300.00

(不含稅)

TWD121,060.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年4月06日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
1000 - 1000	TWD115.30	TWD115,300.00
2000 +	TWD113.00	TWD113,000.00

* 參考價格

RS庫存編號:: 230-8417
製造零件編號:: AS4C16M16SA-6TINTR
製造商:: Alliance Memory

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產品詳細資訊

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選取全部	屬性	值
	品牌	Alliance Memory
	Memory Size	256Mbit
	Organisation	16M x 16
	SDRAM Class	DDR
	Data Rate	166MHz
	Data Bus Width	16bit
	Address Bus Width	13bit
	Number of Bits per Word	16bit
	Maximum Random Access Time	5ns
	Number of Words	16 M
	Mounting Type	Surface Mount
	Package Type	TSOP
	Pin Count	54
	Dimensions	22.35 x 10.29 x 1.2mm
	Height	1.2mm
	Length	22.35mm
	Maximum Operating Temperature	+85 °C
	Maximum Operating Supply Voltage	3.6 V
	Minimum Operating Supply Voltage	3 V
	Minimum Operating Temperature	-40 °C
	Width	10.29mm

	選取全部
	品牌 Alliance Memory
	Memory Size 256Mbit
	Organisation 16M x 16
	SDRAM Class DDR
	Data Rate 166MHz
	Data Bus Width 16bit
	Address Bus Width 13bit
	Number of Bits per Word 16bit
	Maximum Random Access Time 5ns
	Number of Words 16 M
	Mounting Type Surface Mount
	Package Type TSOP
	Pin Count 54
	Dimensions 22.35 x 10.29 x 1.2mm
	Height 1.2mm
	Length 22.35mm
	Maximum Operating Temperature +85 °C
	Maximum Operating Supply Voltage 3.6 V
	Minimum Operating Supply Voltage 3 V
	Minimum Operating Temperature -40 °C
	Width 10.29mm

Datasheet - AS4C16M16SA-6TINTR

The Alliance Memory 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented

accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.

Fast access time from clock: 5/5.4 ns
Fast clock rate: 166/143 MHz
Fully synchronous operation
Internal pipelined architecture
4M word x 16-bit x 4-bank

Alliance Memory AS4C16M16SA-6TINTR, SDRAM 256Mbit Surface Mount, 166MHz, 3 V to 3.6 V, 54-Pin TSOP

訂單超過 $1,300.00 免費送貨

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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