Infineon 1.2 kV 30 A SiC Diode Schottky 2-Pin TO-247 IDWD30G120C5XKSA1
- RS庫存編號:
- 222-4843
- 製造零件編號:
- IDWD30G120C5XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 30 件）*
TWD9,282.00
(不含稅)
TWD9,746.10
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 240 件從 2027年10月14日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 60 | TWD309.40 | TWD9,282.00 |
| 90 - 120 | TWD301.50 | TWD9,045.00 |
| 150 + | TWD297.60 | TWD8,928.00 |
* 參考價格
- RS庫存編號:
- 222-4843
- 製造零件編號:
- IDWD30G120C5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Mount Type | SMD | |
| Product Type | SiC Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 30A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Diode Configuration | Single | |
| Series | 5th Generation CoolSiC 1200V Schottky Diode | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 1.65V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 240A | |
| Peak Reverse Current Ir | 248μA | |
| Maximum Operating Temperature | 175°C | |
| Length | 40.21mm | |
| Width | 15.8mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Mount Type SMD | ||
Product Type SiC Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 30A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Diode Configuration Single | ||
Series 5th Generation CoolSiC 1200V Schottky Diode | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 1.65V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 240A | ||
Peak Reverse Current Ir 248μA | ||
Maximum Operating Temperature 175°C | ||
Length 40.21mm | ||
Width 15.8mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
Infineon 5th Generation CoolSiC 1200V Schottky Diode Series SiC Diode, 30A Continuous Forward Current, 1200V Peak Reverse Repetitive Voltage - IDWD30G120C5XKSA1
This SiC Schottky diode is a high-voltage rectifier designed for power-conversion environments requiring fast switching and elevated temperature endurance. It operates across a wide ambient range and is supplied in a TO-247 surface-mount package suited to heat-sinking and power-system assembly. The component is intended for use where low forward drop, Rapid recovery and robust surge capability are required.
Features and Benefits:
• 30A continuous forward current reduces heat-related conduction losses
• 1.65V maximum forward voltage lowers conduction power dissipation
• 240A Peak surge capability protects against transient overloads
• 1200V Peak reverse rating enables high-voltage rectification
• 248μA Peak reverse leakage minimises standby reverse losses
• 1.65V maximum forward voltage lowers conduction power dissipation
• 240A Peak surge capability protects against transient overloads
• 1200V Peak reverse rating enables high-voltage rectification
• 248μA Peak reverse leakage minimises standby reverse losses
Applications
• Suitable for 1200V SiC rectifier for power electronics
• Ideal for high-temperature switching up to 175°C
• Used with power modules requiring TO-247 SiC diode high temperature 175°C
• Can be used for designs needing 1200V SiC rectifier diode Ifsm 240A
• Suitable for circuits demanding SiC Schottky 30A 1.65V forward
• Ideal for high-temperature switching up to 175°C
• Used with power modules requiring TO-247 SiC diode high temperature 175°C
• Can be used for designs needing 1200V SiC rectifier diode Ifsm 240A
• Suitable for circuits demanding SiC Schottky 30A 1.65V forward
What temperature range can it operate within?
It is rated to function from -55°C up to 175°C.
How many electrical connections does the device provide?
It features a two-pin configuration for single-diode use.
What package and mounting method does it use?
The device is supplied in a TO-247 package intended for surface mounting.
What standard approvals does the component meet?
It conforms to JEDEC47/20/22 standards.
What is the Peak non-repetitive forward surge capability?
It supports a 240A Peak non-repetitive forward surge current.
相關連結
- Infineon 1200 V 30 A SiC Diode Schottky 2-Pin TO-247 IDWD30G120C5XKSA1
- Infineon 1200 V 40 A Diode SiC Schottky 2-Pin TO-247 IDW40G120C5BFKSA1
- Infineon 1200 V 8 A Diode SiC Schottky 3-Pin TO-247 IDM08G120C5XTMA1
- Infineon 1200 V 20 A SiC Diode Schottky 2-Pin TO-247 IDWD20G120C5XKSA1
- Infineon 1200 V 10 A Diode SiC Schottky 3-Pin TO-247 IDW10G120C5BFKSA1
- Infineon 1200 V 20 A SiC Diode Schottky 2-Pin D2PAK IDK20G120C5XTMA1
- Infineon 1200 V 2 A Diode SiC Schottky 2-Pin DPAK IDM02G120C5XTMA1
- Infineon 1200 V 30 A Diode Schottky 2-Pin TO-247 IDW30G120C5BFKSA1