Infineon 1200 V 10 A Diode SiC Schottky 3-Pin TO-247
- RS庫存編號:
- 222-4833
- 製造零件編號:
- IDW10G120C5BFKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD3,282.00
(不含稅)
TWD3,446.10
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 210 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 60 | TWD109.40 | TWD3,282.00 |
| 90 - 120 | TWD105.20 | TWD3,156.00 |
| 150 + | TWD103.80 | TWD3,114.00 |
* 參考價格
- RS庫存編號:
- 222-4833
- 製造零件編號:
- IDW10G120C5BFKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | 5th Generation CoolSiCTM | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 140A | |
| Maximum Forward Voltage Vf | 2.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 16.13mm | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series 5th Generation CoolSiCTM | ||
Rectifier Type SiC Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 140A | ||
Maximum Forward Voltage Vf 2.3V | ||
Maximum Operating Temperature 175°C | ||
Length 16.13mm | ||
Standards/Approvals J-STD20 and JESD22 | ||
Height 21.1mm | ||
Automotive Standard No | ||
The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 10 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Best-in-class forward voltage (VF)
No reverse recovery charge
Mild positive temperature dependency of VF
Best-in-class surge current capability
Excellent thermal performance
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