Infineon 1200 V 40 A Diode SiC Schottky 2-Pin TO-247 IDW40G120C5BFKSA1
- RS庫存編號:
- 216-8396
- 製造零件編號:
- IDW40G120C5BFKSA1
- 製造商:
- Infineon
可享批量折扣
查看批量定價選項小計（1 件）*
TWD398.00
(不含稅)
TWD417.90
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 4 件從 2026年7月27日 起發貨
- 加上 240 件從 2026年10月22日 起發貨
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單位 | 每單位 |
|---|---|
| 1 - 7 | TWD398.00 |
| 8 - 14 | TWD387.00 |
| 15 + | TWD380.00 |
* 參考價格
- RS庫存編號:
- 216-8396
- 製造零件編號:
- IDW40G120C5BFKSA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 40A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | 5th Generation CoolSiCTM | |
| Diode Configuration | Single | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.3V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 290A | |
| Peak Reverse Current Ir | 1700μA | |
| Maximum Operating Temperature | 175°C | |
| Length | 16.13mm | |
| Height | 41.42mm | |
| Standards/Approvals | JEDEC1) | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 40A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series 5th Generation CoolSiCTM | ||
Diode Configuration Single | ||
Rectifier Type SiC Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.3V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 290A | ||
Peak Reverse Current Ir 1700μA | ||
Maximum Operating Temperature 175°C | ||
Length 16.13mm | ||
Height 41.42mm | ||
Standards/Approvals JEDEC1) | ||
Automotive Standard No | ||
The Infineon CoolSiC generation 5 offers a new leading edge technology for the schottky barrier diode with current rating of 40 A. This latest generation is suitable for use in motor control and drives, solar system and UPS system.
Highest system efficiency
Improved system efficiency at low switching frequencies
Increased power density at high switching frequencies
Higher system reliability
Reduced EMI
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