Infineon 1200 V 40 A Diode SiC Schottky 2-Pin TO-247 IDW40G120C5BFKSA1
- RS庫存編號:
- 216-8396
- 製造零件編號:
- IDW40G120C5BFKSA1
- 製造商:
- Infineon
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TWD398.00
(不含稅)
TWD417.90
(含稅)
訂單超過 $1,300.00 免費送貨
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- 4 件準備從其他地點送貨
- 加上 240 件從 2026年10月22日 起發貨
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單位 | 每單位 |
|---|---|
| 1 - 7 | TWD398.00 |
| 8 - 14 | TWD387.00 |
| 15 + | TWD380.00 |
* 參考價格
- RS庫存編號:
- 216-8396
- 製造零件編號:
- IDW40G120C5BFKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 40A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | 5th Generation CoolSiCTM | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 1700μA | |
| Maximum Forward Voltage Vf | 2.3V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 290A | |
| Maximum Operating Temperature | 175°C | |
| Height | 41.42mm | |
| Length | 16.13mm | |
| Standards/Approvals | JEDEC1) | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 40A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series 5th Generation CoolSiCTM | ||
Rectifier Type SiC Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 1700μA | ||
Maximum Forward Voltage Vf 2.3V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 290A | ||
Maximum Operating Temperature 175°C | ||
Height 41.42mm | ||
Length 16.13mm | ||
Standards/Approvals JEDEC1) | ||
Automotive Standard No | ||
The Infineon CoolSiC generation 5 offers a new leading edge technology for the schottky barrier diode with current rating of 40 A. This latest generation is suitable for use in motor control and drives, solar system and UPS system.
Highest system efficiency
Improved system efficiency at low switching frequencies
Increased power density at high switching frequencies
Higher system reliability
Reduced EMI
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