Infineon 1200 V 15 A Diode Schottky 2-Pin TO-247
- RS庫存編號:
- 216-8391
- 製造零件編號:
- IDW15G120C5BFKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD3,921.00
(不含稅)
TWD4,117.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 180 件從 2026年4月27日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD130.70 | TWD3,921.00 |
| 60 - 90 | TWD127.80 | TWD3,834.00 |
| 120 + | TWD125.00 | TWD3,750.00 |
* 參考價格
- RS庫存編號:
- 216-8391
- 製造零件編號:
- IDW15G120C5BFKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 15A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | 5th Generation CoolSiC | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.7V | |
| Peak Reverse Current Ir | 640μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 170A | |
| Maximum Operating Temperature | 175°C | |
| Length | 16.13mm | |
| Standards/Approvals | JEDEC 1 | |
| Height | 41.42mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 15A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series 5th Generation CoolSiC | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.7V | ||
Peak Reverse Current Ir 640μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 170A | ||
Maximum Operating Temperature 175°C | ||
Length 16.13mm | ||
Standards/Approvals JEDEC 1 | ||
Height 41.42mm | ||
Automotive Standard No | ||
The Infineon CoolSiC generation 5 offers a new leading edge technology for the schottky barrier diode with current rating of 15 A. This latest generation is suitable for use in motor control and drives, solar system and UPS system.
Highest system efficiency
Improved system efficiency at low switching frequencies
Increased power density at high switching frequencies
Higher system reliability
Reduced EMI
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