Infineon 1200 V 15 A Diode Schottky 2-Pin TO-247 IDW15G120C5BFKSA1
- RS庫存編號:
- 216-8392
- 製造零件編號:
- IDW15G120C5BFKSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 件）*
TWD229.00
(不含稅)
TWD240.45
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 207 件從 2026年6月15日 起裝運發貨
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單位 | 每單位 |
|---|---|
| 1 - 7 | TWD229.00 |
| 8 - 14 | TWD223.00 |
| 15 + | TWD219.00 |
* 參考價格
- RS庫存編號:
- 216-8392
- 製造零件編號:
- IDW15G120C5BFKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 15A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | 5th Generation CoolSiC | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 1.7V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 170A | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 640μA | |
| Maximum Operating Temperature | 175°C | |
| Length | 16.13mm | |
| Standards/Approvals | JEDEC 1 | |
| Height | 41.42mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 15A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series 5th Generation CoolSiC | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 1.7V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 170A | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 640μA | ||
Maximum Operating Temperature 175°C | ||
Length 16.13mm | ||
Standards/Approvals JEDEC 1 | ||
Height 41.42mm | ||
Automotive Standard No | ||
The Infineon CoolSiC generation 5 offers a new leading edge technology for the schottky barrier diode with current rating of 15 A. This latest generation is suitable for use in motor control and drives, solar system and UPS system.
Highest system efficiency
Improved system efficiency at low switching frequencies
Increased power density at high switching frequencies
Higher system reliability
Reduced EMI
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